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DB30A A2010 5380H3 APT33 PL002 1N3821 DB30A 2N1636
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  unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max 1PS76SB40 features low forward volatge guardringprotected very small plastic smd package low diode capacitance. absolute maximum ratings ta = 25 paramater symbol conditions min max unit continuous reverse voltage v r 4v continuous forward current i f 120 ma repetitive peak forward current i frm t p 1s;? 0.5 120 ma non-repetitive peak forward current i fsm t p < 10 ms 200 ma storage temperature t stg -65 +150 junction temperature t j 150 operating ambient temperature t amb -65 +150 electrical characteristics ta = 25 paramater symbol conditions max unit i f = 1 ma 380 mv i f = 10 ma 500 mv i f =40ma 1 v v r =30v;note1; 1 a v r =40v;note1; 10 a diode capacitance c d v r =0v;f=mhz; 5 pf thermal resistance from junction to ambient r thj-a 450 k/w note: 1.pulse test: tp = 300 s; ? = 0.02. continuous reverse current i r continuous forward voltage v f marking marking s4 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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